N-channel Power MOSFET for surface mount applications. Features 800V drain-to-source breakdown voltage and 12A continuous drain current. Offers 850mΩ drain-to-source resistance at a nominal 5V gate-source voltage. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 360W. Includes a 25ns fall time and 70ns turn-off delay time.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXFV12N80PS technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 800V |
| Dual Supply Voltage | 800V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 850mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Termination | SMD/SMT |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 70ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFV12N80PS Datasheet
Download the complete datasheet for Ixys IXFV12N80PS to view detailed technical specifications.
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