The IXFV12N90P is a high-power N-channel power MOSFET from Ixys, packaged in a TO-220-3 case for through-hole mounting. It can handle a maximum operating temperature of 150°C and a minimum of -55°C. The device has a maximum power dissipation of 380W and a drain to source breakdown voltage of 900V. It is RoHS compliant and part of the HiPerFET and PolarP2 series.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power380W
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Technical Specifications
Ixys IXFV12N90P technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 900V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.08nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 380W |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFV12N90P Datasheet
Download the complete datasheet for Ixys IXFV12N90P to view detailed technical specifications.
No datasheet is available for this part.
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