The IXFV14N80P is a high-power N-channel power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 800V and a continuous drain current of 14A. The device is packaged in a TO-220-3 package and is suitable for through-hole mounting. It is compliant with RoHS regulations and is part of the HiPerFET and PolarHT series.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power400W
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Technical Specifications
Ixys IXFV14N80P technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 800V |
| Input Capacitance | 3.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Rds On Max | 720mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 62ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFV14N80P Datasheet
Download the complete datasheet for Ixys IXFV14N80P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.