The IXFV18N60P is an N-channel MOSFET with a continuous drain current of 18A and a drain to source breakdown voltage of 600V. It features a drain to source resistance of 400mR and a gate to source voltage of 30V. The device is packaged in a TO-220-3 package and is rated for a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is RoHS compliant and lead free.
PackageTO-220-3
Current Rating18A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFV18N60P technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 62ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFV18N60P Datasheet
Download the complete datasheet for Ixys IXFV18N60P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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