N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 22A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 350mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, it boasts a maximum power dissipation of 400W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 23ns fall time and 60ns turn-off delay time.
PackageTO-220-3
Current Rating22A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFV22N60P technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 22A |
| Current Rating | 22A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 350MR |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Rds On Max | 350mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 60ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFV22N60P Datasheet
Download the complete datasheet for Ixys IXFV22N60P to view detailed technical specifications.
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