IXFV26N50PS

N-Channel Power MOSFET, 500V Drain-to-Source Voltage, 26A Continuous Drain Current, and 230mΩ Drain-to-Source Resistance. Features include a 400W maximum power dissipation, 3.6nF input capacitance, and a 5.5V threshold voltage. This silicon Metal-Oxide-Semiconductor FET is designed for surface mount applications with a PLUS220SMD package. RoHS compliant and lead-free, it operates within a temperature range of -55°C to 150°C.