The IXFV52N30PS is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 300V and a continuous drain current of 52A. The device has a gate to source voltage of 20V and an input capacitance of 3.49nF. It is packaged in a surface mount package and is compliant with RoHS regulations.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
Power400W
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Technical Specifications
Ixys IXFV52N30PS technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 52A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 66mR |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.49nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Rds On Max | 66mR |
| RoHS Compliant | Yes |
| Series | PolarHT™ HiPerFET™ |
| Turn-Off Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFV52N30PS Datasheet
Download the complete datasheet for Ixys IXFV52N30PS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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