The IXFX100N25 is a high-power N-channel transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 250V and a continuous drain current of 100A. The device has a maximum power dissipation of 560W and is packaged in a TO-247-3 case for through-hole mounting. The IXFX100N25 is RoHS compliant and part of the HiPerFET series.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power560W
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Technical Specifications
Ixys IXFX100N25 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Rds On Max | 27mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX100N25 Datasheet
Download the complete datasheet for Ixys IXFX100N25 to view detailed technical specifications.
No datasheet is available for this part.
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