N-Channel Power MOSFET, 200V Vds, 120A Continuous Drain Current. Features 17mΩ Rds On, 560W Max Power Dissipation, and 35ns Fall Time. Operates from -55°C to 150°C with 20V Gate-Source Voltage. Through-hole mounting in a TO-247-3 package.
PackageTO-247-3
Current Rating120A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFX120N20 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 120A |
| Current Rating | 120A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 17MR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 110ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX120N20 Datasheet
Download the complete datasheet for Ixys IXFX120N20 to view detailed technical specifications.
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