Ixys
IXFX120N25P
Power Field-Effect Transistor, 120A I(D), 250V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power700W
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Technical Specifications
Ixys IXFX120N25P technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
120A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
24mR
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
24MR
Fall Time
33ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
8nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
700W
Mount
Through Hole
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
700W
Rds On Max
24mR
RoHS Compliant
Yes
Series
PolarHT™ HiPerFET™
Turn-Off Delay Time
130ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFX120N25P Datasheet
Download the complete datasheet for Ixys IXFX120N25P to view detailed technical specifications.
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