The IXFX160N30T is a GigaMOS MOSFET from Ixys with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 160A and a drain to source voltage of 300V. The device has a maximum power dissipation of 1.39kW and an on-resistance of 19mR. It is packaged in a TO-247-3 plastic package and is lead free and RoHS compliant.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXFX160N30T technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 19MR |
| Input Capacitance | 28nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.39kW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX160N30T Datasheet
Download the complete datasheet for Ixys IXFX160N30T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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