N-Channel Power MOSFET, 100V Vds, 180A Continuous Drain Current (ID), and 8mΩ Drain-Source On-Resistance (Rds On). Features 560W Max Power Dissipation, 150°C Max Operating Temperature, and 65ns Fall Time. Through-hole mounting in a TO-247-3 package. Silicon Metal-oxide Semiconductor FET technology.
PackageTO-247-3
Current Rating180A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFX180N10 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 180A |
| Current Rating | 180A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 8MR |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 560W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 560W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 140ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX180N10 Datasheet
Download the complete datasheet for Ixys IXFX180N10 to view detailed technical specifications.
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