N-Channel Power MOSFET, 1200V Drain to Source Breakdown Voltage, 20A Continuous Drain Current, and 0.75ohm Drain to Source Resistance. Features include a 150°C maximum operating temperature, 780W maximum power dissipation, and a TO-247-3 through-hole package. This silicon Metal-oxide Semiconductor FET offers a 4.5V nominal gate-source threshold voltage and 7.4nF input capacitance.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power780W
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Technical Specifications
Ixys IXFX20N120 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Dual Supply Voltage | 1.2kV |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 7.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 780W |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 300ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Through Hole |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 75ns |
| Weight | 6g |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX20N120 Datasheet
Download the complete datasheet for Ixys IXFX20N120 to view detailed technical specifications.
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