The IXFX250N10P is a high-power MOSFET with a maximum drain to source voltage of 100V and continuous drain current of 250A. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The device can operate at temperatures between -55°C and 175°C and has a maximum power dissipation of 1.25kW. The IXFX250N10P is RoHS compliant and features a maximum on-resistance of 6.5mR. It is part of the HiPerFET and PolarP2 series from Ixys.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXFX250N10P technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 250A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 16nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25kW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX250N10P Datasheet
Download the complete datasheet for Ixys IXFX250N10P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.