IXYS

IXFX30N100Q2

Datasheet

1kV 30A N-Channel MOSFET, 400mR Rds On, TO-247

Ixys

IXFX30N100Q2

Name: IXFX30N100Q2 Ixys
Brand: Ixys
SKU: IXFX30N100Q2

1kV 30A N-Channel MOSFET, 400mR Rds On, TO-247

N-channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-power applications. Features a 1kV Drain to Source Breakdown Voltage and 1kV Drain to Source Voltage (Vdss). Offers a continuous drain current (ID) of 30A and a low Drain-source On Resistance-Max of 400mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 735W. Packaged in a TO-247-3 plastic housing for through-hole mounting.

PackageTO-247-3

MountingThrough Hole

PolarityN-CHANNEL

Power735W

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Technical Specifications

Ixys IXFX30N100Q2 technical specifications.

General

Package/Case	TO-247-3
Continuous Drain Current (ID)	30A
Drain to Source Breakdown Voltage	1kV
Drain to Source Resistance	400mR
Drain to Source Voltage (Vdss)	1kV
Drain-source On Resistance-Max	400MR
Fall Time	10ns
Gate to Source Voltage (Vgs)	30V
Height	21.34mm
Input Capacitance	8.2nF
Lead Free	Lead Free
Length	16.13mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	735W
Mount	Through Hole
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	735W
Rds On Max	400mR
RoHS Compliant	Yes
Series	HiPerFET™
Turn-Off Delay Time	60ns
Turn-On Delay Time	22ns
Width	5.21mm