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Technical Specifications
Ixys IXFX32N100P technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 43ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 14.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 960W |
| Rds On Max | 320mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Turn-Off Delay Time | 76ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX32N100P Datasheet
Download the complete datasheet for Ixys IXFX32N100P to view detailed technical specifications.
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