The IXFX32N90P is a high-power N-channel MOSFET with a maximum drain-to-source voltage of 900V and continuous drain current of 32A. It features a low on-resistance of 300mR and is packaged in a TO-247-3 plastic package with a through-hole mount. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IXFX32N90P is suitable for high-power applications such as power supplies, motor drives, and DC-DC converters.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXFX32N90P technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Voltage (Vdss) | 900V |
| Input Capacitance | 10.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 300mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX32N90P Datasheet
Download the complete datasheet for Ixys IXFX32N90P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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