Ixys
IXFX44N50F
Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN
PolarityN-CHANNEL
Power500W
Quick Jump:
Technical Specifications
Ixys IXFX44N50F technical specifications.
General
Continuous Drain Current (ID)
44A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
120mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
500W
RoHS Compliant
Yes
Turn-Off Delay Time
53ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFX44N50F Datasheet
Download the complete datasheet for Ixys IXFX44N50F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.