N-Channel Power MOSFET, 500V Vds, 50A Continuous Drain Current (ID), and 100mΩ Max Drain-Source On-Resistance (Rds On). Features a 520W Max Power Dissipation and operates within a temperature range of -55°C to 150°C. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-247-3 package for through-hole mounting. Includes 45ns fall time and 120ns turn-off delay time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power520W
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Technical Specifications
Ixys IXFX50N50 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 100MR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 520W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 520W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 120ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX50N50 Datasheet
Download the complete datasheet for Ixys IXFX50N50 to view detailed technical specifications.
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