IXYS

IXFX55N50

Datasheet

500V 55A N-Channel MOSFET, 80mR Rds(on), TO-247

Ixys

IXFX55N50

Name: IXFX55N50 Ixys
Brand: Ixys
SKU: IXFX55N50

500V 55A N-Channel MOSFET, 80mR Rds(on), TO-247

N-Channel Power MOSFET, 500V Drain-Source Voltage, 55A Continuous Drain Current, and 80mΩ Max Drain-Source On-Resistance. Features a 625W Max Power Dissipation and operates within a temperature range of -55°C to 150°C. This silicon, metal-oxide semiconductor FET is housed in a TO-247-3 package for through-hole mounting. Includes 45ns fall time and 120ns turn-off delay time.

PackageTO-247-3

Current Rating55A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Ixys IXFX55N50 technical specifications.

General

Package/Case	TO-247-3
Continuous Drain Current (ID)	55A
Current Rating	55A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	80mR
Drain to Source Voltage (Vdss)	500V
Drain-source On Resistance-Max	80MR
Fall Time	45ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	9.4nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	625W
Mount	Through Hole
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	560W
Rds On Max	80mR
RoHS Compliant	Yes
Series	HiPerFET™
Turn-Off Delay Time	120ns
DC Rated Voltage	500V