N-Channel Silicon Metal-oxide Semiconductor FET, a power field-effect transistor featuring 600V drain-to-source breakdown voltage and 64A continuous drain current. This through-hole mounted component offers a low 95mΩ drain-to-source resistance. It operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 1.13kW. Key switching characteristics include a 43ns turn-on delay and an 11ns fall time.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power1.13kW
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Technical Specifications
Ixys IXFX64N60P3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 64A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 95mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.34mm |
| Input Capacitance | 9.9nF |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.13kW |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.13kW |
| Rds On Max | 95mR |
| RoHS Compliant | Yes |
| Series | Polar3™ HiPerFET™ |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 43ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX64N60P3 Datasheet
Download the complete datasheet for Ixys IXFX64N60P3 to view detailed technical specifications.
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