N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 80A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 70mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 1.3kW. Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include an 8ns fall time, 48ns turn-on delay, and 87ns turn-off delay.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power1.3kW
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Technical Specifications
Ixys IXFX80N60P3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.34mm |
| Input Capacitance | 13.1nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3kW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.3kW |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
| Turn-Off Delay Time | 87ns |
| Turn-On Delay Time | 48ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX80N60P3 Datasheet
Download the complete datasheet for Ixys IXFX80N60P3 to view detailed technical specifications.
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