N-Channel Power MOSFET, 500V Vds, 98A Continuous Drain Current (ID), and 50mΩ Rds On. This silicon, metal-oxide semiconductor FET features a 1.3kW maximum power dissipation and operates within a temperature range of -55°C to 150°C. Designed for through-hole mounting in a TO-247-3 package, it offers a 35ns turn-on delay and 65ns turn-off delay, with a 6ns fall time. The component is RoHS compliant and lead-free.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power1.3kW
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Technical Specifications
Ixys IXFX98N50P3 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 98A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 21.34mm |
| Input Capacitance | 13.1nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3kW |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.3kW |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | Polar3™ HiPerFET™ |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 35ns |
| Width | 5.21mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFX98N50P3 Datasheet
Download the complete datasheet for Ixys IXFX98N50P3 to view detailed technical specifications.
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