The IXGA12N60B is a 600V insulated gate bipolar transistor with a maximum collector current of 24A and a maximum power dissipation of 100W. It is packaged in a TO-263-3 package and is designed for surface mount applications. The transistor operates within a temperature range of -55°C to 150°C and is RoHS compliant. The IXGA12N60B is part of the HiPerFAST series from Ixys.
PackageTO-263-3
MountingSurface Mount
Quick Jump:
Technical Specifications
Ixys IXGA12N60B technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.1V |
| Input Type | STANDARD |
| Max Collector Current | 24A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Weight | 0.056438oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGA12N60B Datasheet
Download the complete datasheet for Ixys IXGA12N60B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
