The IXGA12N60CD1 is a high-power insulated gate bipolar transistor from Ixys, featuring a collector-emitter breakdown voltage of 600V and a maximum collector current of 24A. It is designed for surface mount applications and has a maximum power dissipation of 100W. The device operates within a temperature range of -55°C to 150°C and is compliant with RoHS standards. The IXGA12N60CD1 is packaged in a TO-263-3 case and is available in quantities of 50 per rail/tube packaging.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Ixys IXGA12N60CD1 technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Max Collector Current | 24A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Weight | 0.056438oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGA12N60CD1 Datasheet
Download the complete datasheet for Ixys IXGA12N60CD1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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