The IXGA20N100 is a 1kV insulated gate bipolar transistor with a maximum collector current of 40A and a maximum power dissipation of 150W. It is packaged in a TO-263-3 surface mount package and is RoHS compliant. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is suitable for use in high-power applications where a high voltage and current are required.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Ixys IXGA20N100 technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 1kV |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 1kV |
| Collector-emitter Voltage-Max | 3V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | IXGA20N100 |
| Turn-Off Delay Time | 350ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.056438oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGA20N100 Datasheet
Download the complete datasheet for Ixys IXGA20N100 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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