The IXGA20N120 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 40A. It features a TO-263-3 package and is designed for surface mount applications. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150W. The IXGA20N120 is compliant with RoHS regulations.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Ixys IXGA20N120 technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | IXGA20N120 |
| Weight | 0.056438oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGA20N120 Datasheet
Download the complete datasheet for Ixys IXGA20N120 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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