Ixys
IXGA7N60BD1
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Ixys IXGA7N60BD1 technical specifications.
General
Package/Case
TO-263-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2V
Input Type
STANDARD
Max Collector Current
14A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Surface Mount
Package Quantity
50
Packaging
Rail/Tube
Reverse Recovery Time
35ns
RoHS Compliant
Yes
Series
HiPerFAST™
Weight
0.056438oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXGA7N60BD1 Datasheet
Download the complete datasheet for Ixys IXGA7N60BD1 to view detailed technical specifications.
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