Ixys
IXGE200N60B
Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, ISOPLUS227, 4 PIN
MountingChassis Mount, Screw
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Technical Specifications
Ixys IXGE200N60B technical specifications.
General
Collector Emitter Breakdown Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.3V
Input
Standard
Input Capacitance
11nF
Max Collector Current
160A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
416W
Mount
Chassis Mount, Screw
NTC Thermistor
No
Package Quantity
10
Packaging
Rail/Tube
RoHS Compliant
Yes
Series
HiPerFAST™
Compliance
RoHS
Compliant
Datasheet
Ixys IXGE200N60B Datasheet
Download the complete datasheet for Ixys IXGE200N60B to view detailed technical specifications.
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