The IXGH12N60CD1 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 24A. It features a TO-247-3 flange mount package and is designed for high-power applications. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 100W. The IXGH12N60CD1 is compliant with RoHS regulations and is available in a package quantity of 30 units per rail/tube packaging.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGH12N60CD1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 24A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 35ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™, Lightspeed™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.229281oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH12N60CD1 Datasheet
Download the complete datasheet for Ixys IXGH12N60CD1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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