Ixys
IXGH12N90C
Insulated Gate Bipolar Transistor, 24A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGH12N90C technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
900V
Collector Emitter Voltage (VCEO)
900V
Collector-emitter Voltage-Max
3V
Input Type
STANDARD
Max Collector Current
24A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
RoHS Compliant
Yes
Series
HiPerFAST™, Lightspeed™
Weight
0.229281oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXGH12N90C Datasheet
Download the complete datasheet for Ixys IXGH12N90C to view detailed technical specifications.
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