The IXGH28N120BD1 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 50A. It has a maximum power dissipation of 250W and is packaged in a 3-pin TO-247AD. The transistor is RoHS compliant and has a reverse recovery time of 40ns. It can operate over a temperature range of -55°C to 150°C and is suitable for use in high-power applications.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGH28N120BD1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.5V |
| Input Type | STANDARD |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 40ns |
| RoHS Compliant | Yes |
| Weight | 0.229281oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH28N120BD1 Datasheet
Download the complete datasheet for Ixys IXGH28N120BD1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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