Ixys
IXGH32N90B2
Insulated Gate Bipolar Transistor, 64A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGH32N90B2 technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
900V
Collector Emitter Voltage (VCEO)
900V
Collector-emitter Voltage-Max
2.7V
Input Type
STANDARD
Max Collector Current
64A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
RoHS Compliant
Yes
Series
HiPerFAST™
Weight
0.229281oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXGH32N90B2 Datasheet
Download the complete datasheet for Ixys IXGH32N90B2 to view detailed technical specifications.
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