The IXGH36N60A3 is a 600V insulated gate bipolar transistor with a maximum power dissipation of 220W. It is packaged in a TO-247-3 case and is suitable for through-hole mounting. The device is lead-free and RoHS compliant, making it suitable for use in a variety of applications. The IXGH36N60A3 is part of the GenX3 series from Ixys.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGH36N60A3 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 1.4V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Power Dissipation | 220W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH36N60A3 Datasheet
Download the complete datasheet for Ixys IXGH36N60A3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.