Ixys
IXGH36N60B3D4
Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGH36N60B3D4 technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.8V
Input Type
STANDARD
Max Collector Current
36A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Reverse Recovery Time
60ns
RoHS Compliant
Yes
Series
GenX3™
Weight
0.229281oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXGH36N60B3D4 Datasheet
Download the complete datasheet for Ixys IXGH36N60B3D4 to view detailed technical specifications.
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