The IXGH40N120C3 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 75A. It is packaged in a 3-pin TO-247AD package and is suitable for high-power applications. The device is RoHS compliant and is available in quantities of 30 per rail or tube packaging. The IXGH40N120C3 is designed for use in a variety of applications, including power supplies and motor drives.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXGH40N120C3 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 4.4V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Power Dissipation | 380W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH40N120C3 Datasheet
Download the complete datasheet for Ixys IXGH40N120C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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