The IXGH48N60C3C1 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 75A and a maximum power dissipation of 300W. It is packaged in a TO-247AD 3-pin package and is suitable for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is RoHS compliant. It is not radiation hardened and is not compliant with Reach SVHC regulations.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Ixys IXGH48N60C3C1 technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH48N60C3C1 Datasheet
Download the complete datasheet for Ixys IXGH48N60C3C1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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