The IXGH50N120C3 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 75A. It has a maximum power dissipation of 460W and is packaged in a 3-pin TO-247 case. The device is designed for through-hole mounting and is compliant with RoHS regulations. The IXGH50N120C3 is part of the GenX3 series from Ixys.
PackageTO-247-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Ixys IXGH50N120C3 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 4.2V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Power Dissipation | 460W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH50N120C3 Datasheet
Download the complete datasheet for Ixys IXGH50N120C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
