The IXGH50N60B is a 600V insulated gate bipolar transistor with a maximum collector current of 75A. It is packaged in a TO-247AD flange mount with a maximum power dissipation of 300W. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IXGH50N60B is part of the HiPerFAST series and is available in bulk packaging.
PackageTO-247AD
Current Rating75A
MountingThrough Hole
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Technical Specifications
Ixys IXGH50N60B technical specifications.
General
| Package/Case | TO-247AD |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.3V |
| Current Rating | 75A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| DC Rated Voltage | 600V |
| Weight | 0.229281oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH50N60B Datasheet
Download the complete datasheet for Ixys IXGH50N60B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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