The IXGH64N60A3 is a 600V insulated gate bipolar transistor from Ixys, packaged in a TO-247-3 case and designed for through hole mounting. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 460W. The device is compliant with RoHS regulations and is available in quantities of 30 per packaging unit.
PackageTO-247-3
MountingThrough Hole
Power460W
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Technical Specifications
Ixys IXGH64N60A3 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 600V |
| Collector-emitter Voltage-Max | 1.35V |
| Input Type | STANDARD |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 460W |
| RoHS Compliant | Yes |
| Series | GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGH64N60A3 Datasheet
Download the complete datasheet for Ixys IXGH64N60A3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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