Ixys
IXGH72N60A3
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3
PackageTO-247-3
MountingThrough Hole
Power540W
Quick Jump:
Technical Specifications
Ixys IXGH72N60A3 technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.35V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.35V
Input Capacitance
6.6nF
Input Type
STANDARD
Lead Free
Lead Free
Max Collector Current
75A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
540W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
540W
RoHS Compliant
Yes
Series
GenX3™
Turn-Off Delay Time
320ns
Turn-On Delay Time
31ns
Weight
0.229281oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXGH72N60A3 Datasheet
Download the complete datasheet for Ixys IXGH72N60A3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
