N-Channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 1700V collector-emitter voltage (V(BR)CES) and a maximum collector current of 600A. With a low collector-emitter saturation voltage of 2.5V and a power dissipation of 830W, this through-hole component is housed in a TO-264 package. Operating temperature range spans from -55°C to 150°C, with turn-on delay at 35ns and turn-off delay at 285ns. This RoHS compliant, lead-free device is supplied in rail/tube packaging.
PackageTO-264
MountingThrough Hole
Power830W
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Technical Specifications
Ixys IXGK100N170 technical specifications.
General
| Package/Case | TO-264 |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 1.7kV |
| Lead Free | Lead Free |
| Max Collector Current | 600A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 830W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 285ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGK100N170 Datasheet
Download the complete datasheet for Ixys IXGK100N170 to view detailed technical specifications.
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