N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V Collector-Emitter Breakdown Voltage and a maximum collector current of 240A. This through-hole component, housed in a TO-264-3 package, offers a maximum power dissipation of 830W and a low collector-emitter saturation voltage of 1.85V. Designed for demanding applications, it operates across a wide temperature range from -55°C to 150°C and boasts fast switching speeds with a turn-on delay of 40ns and turn-off delay of 490ns. This RoHS compliant device is lead-free and suitable for high-power switching applications.
PackageTO-264-3
MountingThrough Hole
Power830W
Quick Jump:
Technical Specifications
Ixys IXGK120N120A3 technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.2V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 240A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 830W |
| RoHS Compliant | Yes |
| Series | GenX3™ |
| Turn-Off Delay Time | 490ns |
| Turn-On Delay Time | 40ns |
| Weight | 0.35274oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGK120N120A3 Datasheet
Download the complete datasheet for Ixys IXGK120N120A3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
