The IXGK35N120BD1 is a high-power insulated gate bipolar transistor (IGBT) from Ixys, featuring a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 70A. It is packaged in a TO-264AA package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 150°C. The IGBT is compliant with RoHS regulations and is available in a package quantity of 25, packaged in rail/Tube. It has a maximum power dissipation of 350W and a reverse recovery time of 40ns.
PackageTO-264AA
MountingThrough Hole
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Technical Specifications
Ixys IXGK35N120BD1 technical specifications.
General
| Package/Case | TO-264AA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.3V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 40ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Weight | 0.35274oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGK35N120BD1 Datasheet
Download the complete datasheet for Ixys IXGK35N120BD1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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