The IXGK50N120C3H1 is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 95A and a maximum power dissipation of 460W. It is packaged in a TO-264-3 package and is available in a rail or tube packaging with 25 devices per package. The IGBT is RoHS compliant and suitable for use in a variety of applications. It has a reverse recovery time of 75ns and is designed for use in high-power switching applications.
PackageTO-264-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Ixys IXGK50N120C3H1 technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 4.2V |
| Input Type | STANDARD |
| Max Collector Current | 95A |
| Max Power Dissipation | 460W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 75ns |
| RoHS Compliant | Yes |
| Series | GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGK50N120C3H1 Datasheet
Download the complete datasheet for Ixys IXGK50N120C3H1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
