The IXGK50N60C2D1 is an insulated gate bipolar transistor from Ixys with a collector-emitter breakdown voltage of 600V and a maximum collector current of 75A. It has a maximum power dissipation of 480W and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a TO-264-3 case and is mounted through a hole. It is RoHS compliant and part of the HiPerFAST series.
PackageTO-264-3
MountingThrough Hole
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Technical Specifications
Ixys IXGK50N60C2D1 technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 35ns |
| RoHS Compliant | Yes |
| Series | HiPerFAST™ |
| Weight | 0.35274oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGK50N60C2D1 Datasheet
Download the complete datasheet for Ixys IXGK50N60C2D1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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