Ixys
IXGK72N60B3H1
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
PackageTO-264-3
MountingThrough Hole
Power540W
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Technical Specifications
Ixys IXGK72N60B3H1 technical specifications.
General
Package/Case
TO-264-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
600V
Collector-emitter Voltage-Max
1.8V
Input Type
STANDARD
Lead Free
Lead Free
Max Collector Current
75A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
540W
Mount
Through Hole
Package Quantity
25
Packaging
Rail/Tube
Power Dissipation
540W
Reverse Recovery Time
140ns
RoHS Compliant
Yes
Series
GenX3™
Compliance
RoHS
Compliant
Datasheet
Ixys IXGK72N60B3H1 Datasheet
Download the complete datasheet for Ixys IXGK72N60B3H1 to view detailed technical specifications.
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