N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 2500V Collector Emitter Breakdown Voltage and 180A continuous collector current. This device offers a low Collector Emitter Saturation Voltage of 2.7V and a maximum power dissipation of 780W. Packaged in a TO-264AA plastic through-hole mount, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-264AA
MountingThrough Hole
Power780W
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Technical Specifications
Ixys IXGK75N250 technical specifications.
General
| Package/Case | TO-264AA |
| Collector Emitter Breakdown Voltage | 2.5kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 2.5kV |
| Collector-emitter Voltage-Max | 3.6V |
| Input Capacitance | 9nF |
| Input Type | STANDARD |
| Max Collector Current | 170A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 780W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGK75N250 Datasheet
Download the complete datasheet for Ixys IXGK75N250 to view detailed technical specifications.
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