The IXGK82N120B3 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 230A. It has a maximum power dissipation of 1.25kW and is packaged in a TO-264-3 case with a through hole mount. The device is RoHS compliant and available in a package quantity of 25. It is part of the GenX3 series from Ixys.
PackageTO-264-3
MountingThrough Hole
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Technical Specifications
Ixys IXGK82N120B3 technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 3.2V |
| Input Type | STANDARD |
| Max Collector Current | 230A |
| Max Power Dissipation | 1.25kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GenX3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXGK82N120B3 Datasheet
Download the complete datasheet for Ixys IXGK82N120B3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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