
The IXGM40N60A is a 600V insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 75A. It is packaged in a TO-204AE flange mount package and is designed for chassis mount applications. The transistor has a maximum power dissipation of 250W and an operating temperature range of -55°C to 150°C. It is lead-free and RoHS compliant.
Ixys IXGM40N60A technical specifications.
| Package/Case | TO-204AE |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 75A |
| Input | Standard |
| Input Capacitance | 4.5nF |
| Lead Free | Lead Free |
| Max Collector Current | 75A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Chassis Mount, Through Hole |
| NTC Thermistor | No |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXGM40N60A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
